v20 silicon pin chips advanced: data sheets contain information regarding a product m/a-com technology solutions is considering for development. performance is based on target specifications, simulated results, and/or prototype measurements. commitment to develop is not guaranteed. preliminary: data sheets contain information regarding a product m/a-com technology solutions has under development. performance is based on engineering tests. specifications are typical. mechanical outline has been fixed. engineering samples and/or test data may be available. commitment to produce in volume is not guaranteed. ? north america tel: 800.366.2266 ? europe tel: +353.21.244.6400 ? india tel: +91.80.43537383 ? china tel: +86.21.2407.1588 visit www.macomtech.com for addi tional data sheets and product information. m/a-com technology solutions inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. 1 features ? switch & attenuator die ? extensive selection of i-region lengths ? hermetic ? glass passivated cermachip ? ? oxide passivated planar chips ? voltage ratings to 3000v ? fast switching speed ? low loss ? high isolation ? rohs compliant absolute maximum ratings 1 t amb = +25c (unless otherwise specified) description m/a-com technology solutions offers a comprehensive line of low capacitance, planar and mesa, silicon pin diode chips which use ceramic glass and silicon nitride passivation technology. the silicon pin chip series of devices cover a broad spectrum of performance requirements for control circ uit applications. they are available in several choices of i-region lengths and have been optimally designed to minimize parametric trade offs when considering low capacitanc e, low series resistance, and high breakdown voltages. their small size and low parasitics, make them an ideal choice for broadband, high frequency, micro-strip hybrid assemblies. the attenuator line of pin diode chips are a planar or mesa construction and because of their thicker i-regions and predictable r s vs. i characteristics, they are well suited for low distortion attenuator and switch circuits. incorporated in the chip?s construction is m/a-com tech?s, time proven, hard glass, cermachip ? . the hard glass passivation completely encapsulates the entire pin junction area resulting in a hermetically sealed chip which has been qualified in many military applications. these cermachip ? diodes are available in a wide range of voltages, up to 3,000 volts, which are capable of controlling kilowatts of rf power. many of m/a-com tech?s silicon pin diode chips are also available in several different package styles. please refer to the ?packaged pin diode datasheet? for case style availability and electrical specifications located on the m/a-com tech website at : macomtech.com/datasheets/packagedpindiodes and for high voltage, high power devices at : macomtech.com/datasheets/ma4pk2000_3000_series parameter absolute maximum forward current (i f ) per p/n r s vs. i graph reverse voltage (v r ) per specification table power dissipation (w) 175c ? t ambient c theta operating temperature -55c to +175c storage temperature -55c to +200c junction temperature +175c mounting temperature +320c for 10 seconds 1. exceeding these limits may cause permanent damage to the chip anode full area cathode
v20 silicon pin chips advanced: data sheets contain information regarding a product m/a-com technology solutions is considering for development. performance is based on target specifications, simulated results, and/or prototype measurements. commitment to develop is not guaranteed. preliminary: data sheets contain information regarding a product m/a-com technology solutions has under development. performance is based on engineering tests. specifications are typical. mechanical outline has been fixed. engineering samples and/or test data may be available. commitment to produce in volume is not guaranteed. ? north america tel: 800.366.2266 ? europe tel: +353.21.244.6400 ? india tel: +91.80.43537383 ? china tel: +86.21.2407.1588 visit www.macomtech.com for addi tional data sheets and product information. m/a-com technology solutions inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. 2 low capacitance pin specification @ t amb = +25c part number max. rev. voltage 3 v r <10 a v dc max. cap. 1 mhz c j @ -10 v pf max. series res. 500 mhz r s @ 10 ma ? nominal characteristics carrier lifetime 1 t l s reverse recovery time 2 t rr s i region length m theta c/w anode diameter 0.5 mils chip size 0.5 mils chip thk. 0.5 mils ma4p161-134 100 0.10 1.50 150 15 13 65 3.5 13x13 6 ma4p203-134 100 0.15 1.50 150 25 13 75 3.1 13x13 6 madp-000165-01340w 200 0.06 2.50 200 20 19 30 1.8 13x13 7 madp-000135-01340w 200 0.15 1.20 440 44 19 30 3.1 13x13 10 ma4p7493-134 150 0.05 1.80 80 8 19 60 3.8 13x13 6.5 notes: 1. nominal carrier life time (t l ) specified at i f = + 10ma , i rev = - 6ma. 2. nominal reverse recovery time specified at i f = + 20ma , i rev = - 200ma. 3. reverse voltage (v r ) is sourced and the resultant reverse leakage current (i r ) is measured to be <10 a . attenuator pin specification @ t amb = +25c part number max. rev. voltage 2 v r <10 a v dc max. cap. 1mhz c j @ -100 v pf max. series res. 100mhz r s @ 10 ma ? nominal characteristics carrier lifetime 1 t l s series res. 100mhz r s @ 10 a ? series res. 100mhz r s @ 1 ma ? i region length mils theta c/w anode diameter 0.5 mils chip size 2 mils chip thk. 1 mils ma47416-132 200 0.15 6 2 2000 30 4 30 7.5 x7.5 3 19x19 7 ma47418-134 200 0.15 3 1 500 15 2 25 7.5 13x13 7 notes: 1. nominal carrier life time (t l ) specified at i f = + 10ma, i rev = - 6ma. 2. reverse voltage (v r ) is sourced and the resultant reverse leakage current (i r ) is measured to be <10 a. 3. anode top contact is square.
v20 silicon pin chips advanced: data sheets contain information regarding a product m/a-com technology solutions is considering for development. performance is based on target specifications, simulated results, and/or prototype measurements. commitment to develop is not guaranteed. preliminary: data sheets contain information regarding a product m/a-com technology solutions has under development. performance is based on engineering tests. specifications are typical. mechanical outline has been fixed. engineering samples and/or test data may be available. commitment to produce in volume is not guaranteed. ? north america tel: 800.366.2266 ? europe tel: +353.21.244.6400 ? india tel: +91.80.43537383 ? china tel: +86.21.2407.1588 visit www.macomtech.com for addi tional data sheets and product information. m/a-com technology solutions inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. 3 cermachip ? pin chips specification @ t amb = +25c part number max. rev. volt. 5 v r < 10 a v dc unless otherwise noted max. cap. 1 mhz c j @ -100 v pf unless otherwise noted max. series res. 100 mhz r s @ 100 ma ? nominal characteristics carrier lifetime 4 s i region length m theta c/w anode dia. 0.5 mils chip size 2.0 mils chip thk. 1.0 mils ma4p303-134 200 0.15 @ 10 v 1.5 @ 10 ma 2 0.3 20 30 3.0 13x13 10.0 ma4p404-132 250 0.20 @ 50 v 0.70 @ 50 ma 2 0.6 30 20 6.8 20x20 10.0 ma4p504-132 500 0.20 0.60 1 50 20 6.8 20x20 10.0 ma4p505-131 500 0.35 0.45 2 50 14 13.0 27x27 11.0 ma4p506-131 500 0.70 0.30 3 50 11 15.8 27x27 12.0 ma4p604-131 1000 0.30 1.00 3 90 10 17.0 27x27 13.5 ma4p606-131 1000 0.60 0.70 4 90 8 21.0 32x32 14.0 ma4p607-212 1000 1.30 0.40 12 127 4 37.0 62x62 18.5 ma4pk2000-223 1 2000 2.40 0.20 @ 500 ma 3 30 230 2 72.0 111x111 21.0 ma4pk3000-1252 1 3000 2.90 0.25 @ 500 ma 3 60 350 1.5 85.0 172x172 28.0 madp-000488-13740w 900 0.16 @ 50v 1.6 @ 50 ma 4 140 45 12.2 23x23 13.5 notes: 1. upon completion of circuit installation, the chip must be covered with a dielectric conformal coating such as sylgard 539 ? to prevent voltage arcing. 2. test frequency = 500 mhz 3. test frequency = 4 mhz 4. nominal carrier lifetime (t l ) specified at i f = +10 ma , i rev = - 6 ma. 5. minimum specified v r (reverse voltage) is sourced and the resultant reverse leakage current (i rev ) is measured to be <10 a. anode
v20 silicon pin chips advanced: data sheets contain information regarding a product m/a-com technology solutions is considering for development. performance is based on target specifications, simulated results, and/or prototype measurements. commitment to develop is not guaranteed. preliminary: data sheets contain information regarding a product m/a-com technology solutions has under development. performance is based on engineering tests. specifications are typical. mechanical outline has been fixed. engineering samples and/or test data may be available. commitment to produce in volume is not guaranteed. ? north america tel: 800.366.2266 ? europe tel: +353.21.244.6400 ? india tel: +91.80.43537383 ? china tel: +86.21.2407.1588 visit www.macomtech.com for addi tional data sheets and product information. m/a-com technology solutions inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. 4 typical series resistance vs. forward current performance
v20 silicon pin chips advanced: data sheets contain information regarding a product m/a-com technology solutions is considering for development. performance is based on target specifications, simulated results, and/or prototype measurements. commitment to develop is not guaranteed. preliminary: data sheets contain information regarding a product m/a-com technology solutions has under development. performance is based on engineering tests. specifications are typical. mechanical outline has been fixed. engineering samples and/or test data may be available. commitment to produce in volume is not guaranteed. ? north america tel: 800.366.2266 ? europe tel: +353.21.244.6400 ? india tel: +91.80.43537383 ? china tel: +86.21.2407.1588 visit www.macomtech.com for addi tional data sheets and product information. m/a-com technology solutions inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. 5 ma4pk2000 & ma4pk3000 (2kv & 3kv) chips
v20 silicon pin chips advanced: data sheets contain information regarding a product m/a-com technology solutions is considering for development. performance is based on target specifications, simulated results, and/or prototype measurements. commitment to develop is not guaranteed. preliminary: data sheets contain information regarding a product m/a-com technology solutions has under development. performance is based on engineering tests. specifications are typical. mechanical outline has been fixed. engineering samples and/or test data may be available. commitment to produce in volume is not guaranteed. ? north america tel: 800.366.2266 ? europe tel: +353.21.244.6400 ? india tel: +91.80.43537383 ? china tel: +86.21.2407.1588 visit www.macomtech.com for addi tional data sheets and product information. m/a-com technology solutions inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. 6 package availability table base part number available ods package styles ma4p161 none. use ma4p203 as alternative madp-000165 none madp-000135 none ma47416 none ma47418 none ma4p203 30, 32, 94, 111, 1056 ma4p303 32, 36, 94, 120, 186, 255, 1088 ma4p404 30, 31, 36, 111, 258,1072t* ma4p504 30, 120, 144, 186, 255,1072t* ma4p505 36, 255, 1072t* ma4p506 30, 31, 36, 255, 258, 1072t* ma4p604 30, 43, 255, 258 ma4p606 30, 36, 258 ma4p607 43, 296 ma4p709 150 ma4p7493 none ma4pk2000 1027, 1048,1082, ma4pk3000 1073,1074,1084, package parasitic capacitance package style cap. (pf) 30 0.18 31 0.18 32 0.30 36 0.18 43 0.75 94 0.15 111 0.27 120 0.13 144 0.42 186 0.15 255 0.30 258 0.18 276 0.13 296 0.35 1027 0.80 1048 0.80 1056 0.20 1072 0.16 1073 0.90 1074 0.90 1082 0.80 1084 0.90 1088 0.12 *note: ?t? after the package style number indicates tape and reel. 1072t = 1500pcs/reel datasheets for electrical specifi cations of packaged devices can be found at : macomtech.com/datasheets/packagedpindiodes and for high voltage, high power devices macomtech.com/datasheets/ma4pk2000_3000_series for package outlines refer to web page: macomtech.com/content/outlinedrawings
v20 silicon pin chips advanced: data sheets contain information regarding a product m/a-com technology solutions is considering for development. performance is based on target specifications, simulated results, and/or prototype measurements. commitment to develop is not guaranteed. preliminary: data sheets contain information regarding a product m/a-com technology solutions has under development. performance is based on engineering tests. specifications are typical. mechanical outline has been fixed. engineering samples and/or test data may be available. commitment to produce in volume is not guaranteed. ? north america tel: 800.366.2266 ? europe tel: +353.21.244.6400 ? india tel: +91.80.43537383 ? china tel: +86.21.2407.1588 visit www.macomtech.com for addi tional data sheets and product information. m/a-com technology solutions inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. 7 die handling and bonding information handling: all semiconductor chips should be handled with care to avoid damage or contamination from perspiration, salts, and skin oils. the use of plastic tipped tweezers or vacuum pickup is strongly recommended for the handling and placing of individual components. bulk handling should ensure that abrasion and mechanical shock are minimized. die attach surface: die can be mounted with an 80au/sn20, eutectic solder preform, rohs compliant solders or electrically conductive silver epoxy. the metal rf and d.c. ground plane mounting surface must be free of contamination and should have a surface flatness of < 0.002?. eutectic die attachment using hot gas die bonder : a work surface temperature of 255 o c is recommended. when hot forming gas (95%n/5%h) is applied, the work area temperature should be approximately 290 o c. the chip should not be exposed to temperatures greater than 320 o c for more than 10 seconds. eutectic die attachment using reflow oven : for recommended reflow profile refer to pages 5-7 of application note 538 ?surface mounting instructions?, electrically conductive epoxy die attachment: a controlled amount of electrically conductive, silver epoxy, approximately 1?2 mils in thickness, should be used to minimize ohmic and thermal resistance. a thin epoxy fillet should be visible around the perimeter of the chip after placement to ensure full area coverage. cure conductive epoxy per manufacturer?s schedule. typically 150c for 1 hour. wire and ribbon bonding: the die anode bond pads have a ti-pt-au metallization scheme, with a final gold thickness of 1.0 micron. thermo-compression or thermo-sonic wedge bonding of either gold wire or ribbon is recommended. a bonder heat stage temperature setting of 200 o c, tool tip temperature of 150c and a force of 18 to 50 grams is suggested. ultrasonic energy may also be used but should be adjusted to the minimum amplitude required to achieve an acceptable bond. excessive energy may cause the anode metallization to separate from the chip. automatic ball or wedge bonding may also be used. for more detailed handling and assembly instructions, see application note m541 , ?bonding and handling procedures for chip diode devices?.
|
